2sb507 transistor datasheet book

In fiscal year 2019, the company achieved sales of 8. Application note an1040,mounting considerations for power semiconductors, reprinted in section 6 of this data book. Notice mospec reserves the rights to make changes of the content herein the document anytime without notification. The 2n3906 is a commonly used pnp bipolar junction transistor intended for general purpose. This book presents technical data for motorolas broad line of silicon power transistors. The 2n2222 is a common npn bipolar junction transistor bjt used for general purpose. In the case of a transistor, that table of maximum ratings is probably the single. Full text of towers international transistor selector. Others, transistor substitution data book 1993, scan, pdf.

Jmnic product specification silicon pnp power transistors 2sb507 description with to220c package complement to type 2sd3 low collector saturation voltage applications designed for the output stage of 15w to 25w af power amplifier pinning pin description 1 emitter collector. Pillaging the wealth of information in a datasheet hackaday. Mospec or anyone on its behalf, assumes no responsibility or liability for any errors or. Full text of towers international transistor selector see other formats. Texas instruments transistor and diode databook 1st ed 1973 datasheets for diodes from 1n251 on and transistors from 2n117 on acrobat 7 pdf 34. Description the st901t is a high voltage npn silicon transistor in monolithic special darlington configuration mounted in jedec to220 plastic package, designed for applications such as electronic ignition for small engines scooters, lawnmowers, chainsaws. The 2sb507 transistor might have a current gain anywhere between 40 and 320. Jmnic product specification silicon pnp power transistors 2sb507 description with to 220c. Infineon technologies ag is a german semiconductor manufacturer founded in 1999, when the semiconductor operations of the parent company siemens ag were spun off. Smallsignal transistor data book, 86 pages, 1984, motorola.

Motorola bipolar power transistor device data 3873. The gain of the 2sb507c will be in the range from 40 to 80, 2sb507d ranges from 60 to 120, 2sb507e ranges from 100 to 200, 2sb507f ranges from 160 to 320. Use the 2sb507 d3, instead of the 2sb508d314, in new applications, 25. The 2n107 is an early germanium alloy junction pnp transistor developed by general electric.

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